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RB160M-90
Diodes
Schottky barrier diode
RB160M-90
Applications General rectification External dimensions (Unit : mm)
1.60.1 0.150.03
Land size figure (Unit : mm)
1.2 0.85
Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability.
2.60.1
3.50.2
00.1
0.90.1 0.80.1
PMDU
0.150.03
0.80.1
0.6
Structure
0.45 0.6
Construction Silicon epitaxial planar
ROHM : PMDU JEDEC : SOD-123 Manufacture Date
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0.05 0.250.05
00.1
3.50.05
8.00.2
1.810.05
4.00.1
1.00.2 0
2.80.05
3.710.05 1.050.1
Absolute maximum ratings (Ta=25C)
Param eter R evers e voltage (repetitive peak) R evers e voltagec(DC) Average rectified forward current Forward current s urge peak 60Hz 1cyc J unction tem perature S torage tem perature Mounted on epoxy board. 180 Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg Lim its 90 90 1 30 150 -40 to +150 Unit V V A A
Electrical characteristics (Ta=25C)
Param eter Forward voltage Revers e current Sym bol VF IR Min. Typ. Max. 0.73 100 Unit V A IF =1.0A VR =90V Conditions
3.05
1/3
RB160M-90
Diodes
Electrical characteristic curves (Ta=25C)
Ta=150 1 Ta=75 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 0.1 Ta=150 Ta=25 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 Ta=75 100 10 1 Ta=-25 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 100 10000 Ta=125 1000
f=1MHz
f=1MHz
0.01
10
0.001
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
650 Ta=25 IF=1A n=30pcs
100 90 REVERSE CURRENT:IR(uA) 80 70 60 50 40
AVE:478.3nA
200 Ta=25 T a=25 VR=90V VR=100V n=30pcs n=30pcs 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 100 AVE:149.6pF Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
640
630
620
30 20 10
:36.1612nA
610
AVE:632.1mV
AVE:4.655uA
600 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
200 RESERVE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 150 8.3ms 1cyc
30
100 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms
25
20
1cyc 50
100
15
AVE:7.40ns
10
50 AVE:56.0A 0 IFSM DISRESION MAP
5
0
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
150 Ifsm t PEAK SURGE FORWARD CURRENT:IFSM(A) 100
1000 Mounted on epoxy board Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 100 FORWARD POWER DISSIPATION:Pf(W)
2
1.5
Rth(j-c) 10
1 Sin(180)
D=1/2
DC
50
IM=10mA
IF=0.5A
1
1ms time
0.5
300us
0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
0.1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2
2/3
RB160M-90
Diodes
1
3 2.5 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 2 1.5 D=1/2 1 0.5 Sin(180) 0A 0V t DC T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=45V Tj=150
3 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 150 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 125 150 Sin(180) 0A 0V t DC T Io VR D=t/T VR=45V Tj=150
0.8 REVERSE POWER DISSIPATION:P R (W)
0.6 DC 0.4 D=1/2
0.2
0 0 10 20 30 40 50 60
Sin(180) 70 80 90 0
REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS
30 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:10.7kV
AVE:1.70kV
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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